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| NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings: Collector-Emitter Voltage (VBE = 0, Peak value), VCESM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Collector-Emitter Voltage (Open base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Emitter-Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Peak (tp = 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A Reverse Base Current (Peak Value, Note 1), -IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A Total Power Dissipation (TMB +60C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Mounting Base, RthJMB . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W Note 1. Turn-Off current. Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Collector Cutoff Current (Note 2) Symbol ICES IEBO hFE VCE(sat) VBE(sat) fT ton ts tf Test Conditions VCEM = 1000V, VBE = 0 VCEM = 1000V, VBE = 0, TJ = +125C Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage IC = 0, VEB = 5V IC -= 50mA, VCE = 5V IC = 0.1A, IB = 10mA IC = 0.2A, IB = 20mA Base-Emitter Saturation Voltage Collector-Emitter Sustaining Voltage Transition Frequency Turn-On Time Storage Time Fall Time IC = 0.2A, IB = 20mA IC = 50mA, VCE = 10V, f = 1MHz ICon = 0.2A, VCC = 250V, IBon = 20mA, -IBoff = 40mA VCEO(sus) IC = 100mA, IBoff = 0, L = 25mH Min - - - - - - - 450 - - - - Typ - - - 50 - - - - 20 0.25 2.0 0.4 Max 100 1 1 - 0.8 1.0 1.0 - - 0.50 3.5 1.3 V V V V MHz s s s Unit A mA mA Note 2. Measured with a half sine-wave voltage. .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max |
Price & Availability of NTE2327
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